Low-temperature redistribution of As in Si during Pd2Si formation
- I. Ohdomari
- K.N. Tu
- et al.
- 1981
- Applied Physics Letters
Paper
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2351 results at Applied Physics Letters
Surface compositional modifications during O+2 bombardment of binary alloys
- Ming L. Yu
- Wilhad Reuter
- 1981
- Applied Physics Letters
PaperSilicide films for archival optical storage
- K.N. Tu
- K.Y. Ahn
- et al.
- 1981
- Applied Physics Letters
PaperReduction in dislocation densities in the step-graded growth of InGaAs by molecular-beam epitaxy
- C.M. Serrano
- Chin-An Chang
- 1981
- Applied Physics Letters
PaperVolatile metal-oxide incorporation in layers of GaAs, Ga 1-xAlxAs and related compounds grown by molecular beam epitaxy
- P.D. Kirchner
- J. Woodall
- et al.
- 1981
- Applied Physics Letters
PaperIdentification of electron traps in thermal silicon dioxide films
- A. Hartstein
- D.R. Young
- 1981
- Applied Physics Letters
PaperDiffusion of gold in silicon: A new model
- U. Gösele
- F.F. Morehead
- et al.
- 1981
- Applied Physics Letters
PaperDiffraction of light by magnetoelastic waves
- Archibald W. Smith
- 1967
- Applied Physics Letters
PaperSubnanosecond pair-tunneling to single-particle tunneling transitions in josephson junctions
- J. Matisoo
- 1966
- Applied Physics Letters
PaperEfficient electroluminescence from GaAs diodes at 300°K
- H. Rupprecht
- J. Woodall
- et al.
- 1966
- Applied Physics Letters
Paper