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- K.Y. Lee
- et al.
- 1990
- IEEE Electron Device Letters
Paper
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307 results at IEEE Electron Device Letters
Self-Aligned SiGe-Base Heterojunction Bipolar Transistor by Selective Epitaxy Emitter Window (SEEW) Technology
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- James H. Comfort
- et al.
- 1990
- IEEE Electron Device Letters
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- et al.
- 1990
- IEEE Electron Device Letters
PaperThe Implementation of a Reduced-Field Profile Design for High-Performance Bipolar Transistors
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- et al.
- 1990
- IEEE Electron Device Letters
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- A. Palevski
- Paul M. Solomon
- et al.
- 1990
- IEEE Electron Device Letters
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- Wai Lee
- 1990
- IEEE Electron Device Letters
Paper75-GHz fT SiGe-Base Heterojunction Bipolar Transistors
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- James H. Comfort
- et al.
- 1990
- IEEE Electron Device Letters
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- Steven L. Wright
- et al.
- 1989
- IEEE Electron Device Letters
PaperSpatial Charge Distribution in As-Deposited and UV-Illuminated Gate-Quality Nitrogen-Rich Silicon Nitride
- Jerzy Kanicki
- D. Jousse
- 1989
- IEEE Electron Device Letters
PaperRecombination Lifetime Profiling in Very Thin Si Epitaxial Layers Used for Bipolar VLSI
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- S. Bellone
- et al.
- 1989
- IEEE Electron Device Letters
Paper