A Reduced-Field Design Concept for High-Performance Bipolar Transistors
- Denny D. Tang
- Pong-Fei Lu
- 1989
- IEEE Electron Device Letters
Paper
Publications
307 results at IEEE Electron Device Letters
Sub-300-ps CBL Circuits
- S.K. Wiedmann
- Tze Chiang Chen
- et al.
- 1989
- IEEE Electron Device Letters
PaperSpatial Charge Distribution in As-Deposited and UV-Illuminated Gate-Quality Nitrogen-Rich Silicon Nitride
- Jerzy Kanicki
- D. Jousse
- 1989
- IEEE Electron Device Letters
Paperp-Channel FET Based on p/n Double-Quantum-Well Heterostructure
- Richard A. Kiehl
- Steven L. Wright
- et al.
- 1989
- IEEE Electron Device Letters
PaperGraded-SiGe-Base, Poly-Emitter Heterojunction Bipolar Transistors
- Gary L. Patton
- David L. Harame
- et al.
- 1989
- IEEE Electron Device Letters
PaperDemonstration of a p-Channel BICFET in the GexSi1-x/Si System
- R.C. Taft
- James D. Plummer
- et al.
- 1989
- IEEE Electron Device Letters
PaperEpitaxial base transistors with ultrahigh vacuum chemical vapor deposition (uhv/cvd) epitaxy: Enhanced profile control for greater flexibility in device design
- David L. Harame
- Johannes M.C. Stork
- et al.
- 1989
- IEEE Electron Device Letters
PaperModeling of Currents in a Vertical p-n-p Transistor with Extremely Shallow Emitter
- Mary Jo Saccamango
- Tze-Chiang Chen
- 1989
- IEEE Electron Device Letters
PaperA Submicrometer High-Performance Bipolar Technology
- Tze-Chiang Chen
- Kai-Yap Toh
- et al.
- 1989
- IEEE Electron Device Letters
PaperHigh-Gain Pseudomorphic InGaAs Base Ballistic Hot-Electron Device
- K. Seo
- Mordehai Heiblum
- et al.
- 1989
- IEEE Electron Device Letters
Paper