A New Effect at High Currents in Heterostructure Bipolar Transistors
- Sandip Tiwari
- 1988
- IEEE Electron Device Letters
Paper
Publications
307 results at IEEE Electron Device Letters
Heterostructure Devices Using Self-Aligned p-Type Diffused Ohmic Contacts
- Sandip Tiwari
- Alyce Ginzberg
- et al.
- 1988
- IEEE Electron Device Letters
PaperHigh Transconductance and Velocity Overshoot in NMOS Devices at the 0.1-μm Gate-Length Level
- George A. Sai-Halasz
- Matthew R. Wordeman
- et al.
- 1988
- IEEE Electron Device Letters
PaperInverter Performance Of Deep-Submicrometer Mosfet'S
- George A. Sai-Halasz
- Matthew R. Wordeman
- et al.
- 1988
- IEEE Electron Device Letters
PaperSilicon-Germanium-Base Heterojunction Bipolar Transistors By Molecular Beam Epitaxy
- Gary L. Patton
- Subramanian S. Iyer
- et al.
- 1988
- IEEE Electron Device Letters
PaperHighspeed 1.3-μm GalnAs Detectors Fabricated on GaAs Substrates
- Dennis L. Rogers
- Jerry M. Woodall
- et al.
- 1988
- IEEE Electron Device Letters
PaperElectrical Characteristics of Very Thin SiO2 Deposited at Low Substrate Temperatures
- J. Batey
- E. Tierney
- et al.
- 1987
- IEEE Electron Device Letters
PaperDesign and Experimental Technology for 0.1-μm Gate-Length Low-Temperature Operation FET's
- George A. Sai-Halasz
- Matthew R. Wordeman
- et al.
- 1987
- IEEE Electron Device Letters
PaperLateral Encroachment of Extrinsic-Base Dopant in Submicrometer Bipolar Transistors
- Pong-Fei Lu
- G.P. Li
- et al.
- 1987
- IEEE Electron Device Letters
PaperSymmetric-Gain, Zero-Offset, Self-Aligned, and Refractory-Contact Double HBT's
- Sandip Tiwari
- Steven L. Wright
- 1987
- IEEE Electron Device Letters
Paper