Highspeed 1.3-μm GalnAs Detectors Fabricated on GaAs Substrates
- Dennis L. Rogers
- Jerry M. Woodall
- et al.
- 1988
- IEEE Electron Device Letters
Paper
Publications
307 results at IEEE Electron Device Letters
Silicon-Germanium-Base Heterojunction Bipolar Transistors By Molecular Beam Epitaxy
- Gary L. Patton
- Subramanian S. Iyer
- et al.
- 1988
- IEEE Electron Device Letters
PaperHigh Transconductance and Velocity Overshoot in NMOS Devices at the 0.1-μm Gate-Length Level
- George A. Sai-Halasz
- Matthew R. Wordeman
- et al.
- 1988
- IEEE Electron Device Letters
PaperMonte-Carlo Simulation of Submicrometer Si n-MOSFET's at 77 and 300 K
- Steven E. Laux
- M.V. Fischetti
- 1988
- IEEE Electron Device Letters
PaperHeterostructure Devices Using Self-Aligned p-Type Diffused Ohmic Contacts
- Sandip Tiwari
- Alyce Ginzberg
- et al.
- 1988
- IEEE Electron Device Letters
PaperNoncontact Internal Waveform Measurements with Picosecond Time Resolution on a 0.5-/xm CMOS SRAM
- Yvon Pastol
- Jean-Marc Halbout
- et al.
- 1988
- IEEE Electron Device Letters
PaperEffect of Off-Axis Implant on the Characteristics of Advanced Self-Aligned Bipolar Transistors
- Ching-Te Chuang
- G.P. Li
- et al.
- 1987
- IEEE Electron Device Letters
PaperBipolar Transistor with Self-Aligned Lateral Profile
- G.P. Li
- Tze-Chiang Chen
- et al.
- 1987
- IEEE Electron Device Letters
PaperDepletion-Mode GaAs SISFET's By Selective Ion Implantation
- H. Baratte
- Paul M. Solomon
- et al.
- 1987
- IEEE Electron Device Letters
PaperDesign Considerations of High-Performance Narrow-Emitter Bipolar Transistors
- Denny D. Tang
- Tze-Chiang Chen
- et al.
- 1987
- IEEE Electron Device Letters
Paper