Summary Abstract: Resistivity-process relationships in TiSi2 formed from Ti-Si reaction couplesH.-O. BlomS. Berget al.1985JVSTAPaper
Stress modification of WSi2.2 films by concurrent low energy ion bombardment during alloy evaporationD.S. YeeJ. Floroet al.1985JVSTAPaper
Effects of biased cosputtering on resistivity and step coverage in tungsten silicide filmsK.W. ChoiK.Y. Ahn1985JVSTAPaper
Why the close-packed Ni(111) surface dissociatively chemisorbs oxygen and nucleates oxide faster than the more open Ni(100) surfaceC.R. Brundle1985JVSTAPaper
Summary Abstract: Modification of metals by low energy ions during thin film depositionJ.M.E. HaroerJ.J. Cuomo1985JVSTAPaper
Summary Abstract: Microstructure and electrical conductivity of plasma deposited gold/fluorocarbon composite filmsJ. PerrinB. Despaxet al.1985JVSTAPaper
Rotational polarization in NO scattering from Ag(111)A.W. KleynA.C. Luntzet al.1985Surface SciencePaper
Summary Abstract: Titanium silicide films prepared by reactive sputteringV. DelineF.M. d’Heurle1985JVSTAPaper