IVA-6 Characteristics of AuGeNi Ohmic Contacts to GaAs
- M. Heiblum
- M.I. Nathan
- et al.
- 1981
- IEEE T-ED
Paper
Publications
465 results at IEEE T-ED
Resolution, Overlay, and Field Size for Lithography Systems
- Alec N. Broers
- 1981
- IEEE T-ED
PaperMesostructure Electronics
- Peter J. Price
- 1981
- IEEE T-ED
PaperThe Effect of Concrete Shielding on Cosmic Ray Induced Soft Fails in Electronic Systems
- James F. Ziegler
- 1981
- IEEE T-ED
PaperThe Effect of Base Doping on the Performance of Si Bipolar Transistors at Low Temperatures
- William P. Dumke
- 1981
- IEEE T-ED
PaperJosephson Edge-Junction Devices Using E-Beam Lithography
- Peter Vettiger
- David F. Moore
- et al.
- 1981
- IEEE T-ED
PaperImportance of Boundary Conditions to Conduction in Short Samples
- James J. Rosenberg
- Ellen J. Yoffa
- et al.
- 1981
- IEEE T-ED
PaperIVA-7 Surface Layer Impurity Accumulation Due to Evaporation of GaAs During Annealing
- J. Woodall
- H. Rupprecht
- et al.
- 1981
- IEEE T-ED
PaperVA-5 GaAs Lossy Gate Dielectric FET
- T.L. Andrade
- N. Braslau
- 1981
- IEEE T-ED
PaperNiobium Oxide-Barrier Tunnel Junction
- Stanley I. Raider
- Robert E. Drake
- et al.
- 1980
- IEEE T-ED
Paper