Experimental verification of the mechanism of hot-carrier-induced photon emission in n-MOSFET's with a CCD gate structure
- Hon-Sum Wong
- 1991
- IEDM 1991
Conference paper
Publications
14466 results for Physical Sciences
High performance 0.25 mu m p-MOSFETs with silicon-germanium channels for 300 K and 77 K operation
- V.P. Kesan
- S. Subbana
- et al.
- 1991
- IEDM 1991
Conference paperSingle crystal emitter gap for epitaxial Si- and SiGe-base transistors
- J.H. Comfort
- E.F. Crabbe
- et al.
- 1991
- IEDM 1991
Conference paperTrench storage capacitors for high density DRAMs
- T.V. Rajeevakumar
- T. Lii
- et al.
- 1991
- IEDM 1991
Conference paperLow thermal budget antimony/phosphorus NMOS technology for CMOS
- D.L. Harame
- E. Ganin
- et al.
- 1991
- IEDM 1991
Conference paperProfile scaling constraints for ion-implanted and epitaxial bipolar technology designed for 77 K operation
- John D Cressler
- Emmanuel F Crabe
- et al.
- 1991
- IEDM 1991
Conference paperRole of charge transport and trapping in the reliability of submicron polysilicon thin film transistors
- Frank R. Libsch
- Catherine Y. Wong
- et al.
- 1991
- IEDM 1991
Conference paperLateral p-i-n photodetectors with 18 GHz bandwidth at 1.3 μ m wavelength and small bias voltages
- Sandip Tiwari
- Jeremy Burroughes
- et al.
- 1991
- IEDM 1991
Conference paperCorrelation between magnetic splitting and magnetic moment for 3d transition metals
- F.J. Himpsel
- 1991
- Journal of Magnetism and Magnetic Materials
PaperCritical behaviour of [110]-stressed rbcaf3
- J.Y. Buzaré
- W. Berlinger
- et al.
- 1991
- Ferroelectrics
Paper