Dual stress liner for high performance sub-45nm gate length SOI CMOS manufacturing
- H.S. Yang
- R. Malik
- et al.
- 2004
- IEDM 2004
Conference paper
Publications
18 results at IEDM 2004
Advanced gate stacks with fully silicided (FUSI) gates and high-κ dielectrics: Enhanced performance at reduced gate leakage
- E. Gusev
- C. Cabral Jr.
- et al.
- 2004
- IEDM 2004
Conference paperPerformance comparison and channel length scaling of strained Si FETs on SiGe-on-insulator (SGOI)
- J. Cai
- K. Rim
- et al.
- 2004
- IEDM 2004
Conference paperAggressively scaled (0.143 μm 2) 6T-SRAM cell for the 32 nm node and beyond
- D. Fried
- J. Hergenrother
- et al.
- 2004
- IEDM 2004
Conference paperCharge trapping in aggressively scaled metal gate/high-κ stacks
- E. Gusev
- V. Narayanan
- et al.
- 2004
- IEDM 2004
Conference paperCarbon nanotube electronics and optoelectronics
- Ph. Avouris
- A. Afzali
- et al.
- 2004
- IEDM 2004
Conference paperNovel carbon nanotube FET design with tunable polarity
- Yu-Ming Lin
- Joerg Appenzeller
- et al.
- 2004
- IEDM 2004
Conference paperRF power potential of 90 nm CMOS: Device options, performance, and reliability
- Jörg Scholvin
- David R. Greenberg
- et al.
- 2004
- IEDM 2004
Conference paperSelf-aligned carbon nanotube transistors with novel chemical doping
- Jia Chen
- Christian Klinke
- et al.
- 2004
- IEDM 2004
Conference paperRelevance of remote scattering in gate to channel mobility of thin-oxide CMOS devices
- Paul M. Solomon
- Min Yang
- 2004
- IEDM 2004
Conference paper