22 nm technology compatible fully functional 0.1 μm 2 6T-sram cell
- B. Haran
- A. Kumar
- et al.
- 2008
- IEDM 2008
Conference paper
Publications
15 results at IEDM 2008
32nm general purpose bulk CMOS technology for high performance applications at low voltage
- F. Arnaud
- J. Liu
- et al.
- 2008
- IEDM 2008
Conference paperA statistical study of magnetic tunnel junctions for high-density spin torque transfer-MRAM (STT-MRAM)
- R. Beach
- T. Min
- et al.
- 2008
- IEDM 2008
Conference paperImproved effective switching current (Ieff+) and capacitance methodology for CMOS circuit performance prediction and model-to-hardware correlation
- Xiaojun Yu
- Shu-Jen Han
- et al.
- 2008
- IEDM 2008
Conference paperMobility extraction and quantum capacitance impact in high performance graphene field-effect transistor devices
- Zhihong Chen
- Joerg Appenzeller
- 2008
- IEDM 2008
Conference paperExperimental and theoretical analysis of factors causing asymmetrical temperature dependence of vt in High-k Metal gate CMOS with capped High-k techniques
- Ryosuke Iijima
- Mariko Takayanagi
- 2008
- IEDM 2008
Conference paperMechanisms of retention loss in Ge2Sb2Te 5-based phase-change memory
- Y.H. Shih
- J.Y. Wu
- et al.
- 2008
- IEDM 2008
Conference paperAnalytical model for RESET operation of phase change memory
- B. Rajendran
- J. Karidis
- et al.
- 2008
- IEDM 2008
Conference paperMOSFET performance scaling: Limitations and future options
- Dimitri A. Antoniadis
- Ali Khakifirooz
- 2008
- IEDM 2008
Conference paperA 300-mm wafer-level three-dimensional integration scheme using tungsten through-silicon via and hybrid cu-adhesive bonding
- F. Liu
- R.R. Yu
- et al.
- 2008
- IEDM 2008
Conference paper