K.A. Chao
Physical Review B
Selective protection of the porosity can be implemented in porous materials processing by using an organic polymer fill. This strategy is employed to protect ultralow-k (ULK) materials during patterning of 250-nm lines and spaces. Structures with significantly less sidewall and trench bottom damage are obtained, proving the potential of this novel approach in materials science. Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
K.A. Chao
Physical Review B
Surendra B. Anantharaman, Joachim Kohlbrecher, et al.
MRS Fall Meeting 2020
R.D. Murphy, R.O. Watts
Journal of Low Temperature Physics
J.C. Marinace
JES