W. Lenth, J.-C. Baumert, et al.
Proceedings of SPIE 1989
Frequency doubling of diode laser radiation was achieved by operating an AR-coated diode laser in an extended laser cavity which contained a monolithic potassium niobate frequency doubling resonator as an intracavity element. Extended cavity operation ensured that the diode laser would oscillate only at frequencies that were resonant with the intracavity resonator. A diffraction grating was used to ensure single mode oscillation at the wavelength needed for noncritically phase-matched second harmonic generation. At 100 mA of injection current to the GaAlAs diode laser, 14 mW of 429 nm light were produced.
W. Lenth, J.-C. Baumert, et al.
Proceedings of SPIE 1989
R.M. Macfarlane, E.A. Whittaker, et al.
Electronics Letters
E.J. Lim, M.M. Fejer, et al.
Electronics Letters
Yi Chiu, Venkatraman Gopalan, et al.
Journal of Lightwave Technology