E. Babich, J. Paraszczak, et al.
Microelectronic Engineering
Paper
Far-infrared absorption by excitons in silicon
Abstract
We report on the first observation of 1s to 2p absorption by excitons in pure silicon. A group of strong lines at 10.2, 11.4 and 12.0 meV is observed along with a continuum extending to higher frequency. A theoretical model for the excitonic absorption accounts well for the observed structure. © 1978.
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