Investigation into Temperature Dependent 2T-nC FeRAM Readout Operation

In this work, we successfully fabricate and study the temperature dependence of the 2T-nC ferroelectric random-access memory (FeRAM) cell. Characterization and analysis at various temperatures reveals uniform readout currents across all 64 ferroelectric capacitors. Furthermore, we provide a comprehensive evaluation of the pattern dependence of the read operation. We show that delay operation suffers from the pattern dependence while a discharge of the floating node can eliminate the dependence at a cost of read endurance.