Conference paper
Imaging of oxide and interface charges in SiO2-Si
R. Ludeke, E. Cartier
Microelectronic Engineering
Pronounced structure at large biases in the ballistic-electron-emission- microscopy (BEEM) current for Cr/GaP(110) is attributed to density-of-states effects in GaP. Quasielastic scattering at the Cr-GaP interface appears vital for the effect. Impact ionization in the GaP is invoked to explain the unusually large collector currents that can exceed the injected STM tip current. © 1993 The American Physical Society.
R. Ludeke, E. Cartier
Microelectronic Engineering
G. Landgren, R. Ludeke, et al.
Physical Review B
R. Ludeke, H.J. Wen
Microelectronic Engineering
R. Ludeke, A. Bauer
MRS Fall Meeting 1993