A VLSI-compatible high-speed silicon photodetector for optical data link applications
- Massimo Ghioni
- Franco Zappa
- et al.
- 1996
- IEEE Transactions on Electron Devices
Paper
Publications
33 results for Vijay P. Kesan
Noise Performance of Si/Si1-xGex FET's
- A.F.M. Anwar
- Kuo-Wei Liu
- et al.
- 1995
- IEEE Transactions on Electron Devices
PaperCyclotron effective mass of holes in Si1-xGex/Si quantum wells: Strain and nonparabolicity effects
- J.-P. Cheng
- V.P. Kesan
- et al.
- 1994
- Applied Physics Letters
PaperTitanium silicide/germanide formation on submicron features for high mobility SiGe channel field effect transistors
- P. Agnello
- V.P. Kesan
- et al.
- 1994
- Journal of Electronic Materials
PaperCyclotron effective mass of holes in strained Si1-xGex/Si quantum well structures
- J.-P. Cheng
- V.P. Kesan
- et al.
- 1994
- Surface Science
PaperAn analytical model of current-voltage characteristics and d.c. small-signal parameters for Si/Si1-xGex FETs
- Kuo-Wei Liu
- A.F.M. Anwar
- et al.
- 1994
- Solid State Electronics
PaperCyclotron resonance studies of two-dimensional holes in strained Si 1-xGex/Si quantum wells
- J.-P. Cheng
- V.P. Kesan
- et al.
- 1993
- Applied Physics Letters
PaperSimilarities between the Landau spectra and dispersion relations in Si/Si1-xGex quantum wells investigated by magnetotunneling spectroscopy
- Ulf Gennser
- V.P. Kesan
- et al.
- 1993
- Applied Physics Letters
PaperFemtosecond ellipsometric study of nonequilibrium carrier dynamics in Ge and epitaxial Si1-xGex
- H.R. Choo
- X.F. Hu
- et al.
- 1993
- Applied Physics Letters
PaperInfluence of device structure and growth conditions on the tunneling characteristics of Si/Si1-xGex double barrier structures
- Ulf Gennser
- V.P. Kesan
- et al.
- 1993
- Journal of Electronic Materials
Paper