Equilibrium surface hydrogen coverage during silicon epitaxy using SiH4
- C.M. Greenlief
- M. Offenberg
- et al.
- 1990
- Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Paper
Publications
49 results for Michael Liehr
Diffuse and abrupt interface formation studied by high resolution electron energy loss spectroscopy
- P.A. Thiry
- R. Sporken
- et al.
- 1990
- Superlattices and Microstructures
PaperDefect formation in SiO2/Si(100) by metal diffusion and reaction
- M. Liehr
- H. Dallaporta
- et al.
- 1988
- Applied Physics Letters
PaperStacking-fault-induced defect creation in SiO2 on Si(100)
- M. Liehr
- G.B. Bronner
- et al.
- 1988
- Applied Physics Letters
PaperInvestigation of inas and gasb by high-resolution electron energy-loss spectroscopy
- P.A. Thiry
- J.L. Longueville
- et al.
- 1987
- Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
PaperElectrical properties of vacuum annealed Si surfaces
- J. Werner
- M. Renier
- et al.
- 1987
- Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
PaperKinetics of high-temperature thermal decomposition of Si0 2 on Si(100)
- M. Liehr
- J.E. Lewis
- et al.
- 1987
- Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
PaperDefect microchemistry at the SiO2/Si interface
- G.W. Rubloff
- K. Hofmann
- et al.
- 1987
- Physical Review Letters
PaperDopant redistribution at Si surfaces during vacuum anneal
- M. Liehr
- M. Renier
- et al.
- 1987
- Journal of Applied Physics
PaperHigh temperature reaction and defect chemistry at the Si/SiO2 interface
- K. Hofmann
- G.W. Rubloff
- et al.
- 1987
- Applied Surface Science
Paper