Oxygen vacancy traps in Hi-K/Metal gate technologies and their potential for embedded memory applications
- C. Kothandaraman
- X. Chen
- et al.
- 2015
- IRPS 2015
Conference paper
Publications
32 results for Jeffrey B. Johnson
Hybrid methodology to model random dopant fluctuations in low doped FinFETs
- Samarth Agarwal
- Jeffrey B. Johnson
- et al.
- 2015
- Journal of Computational Electronics
PaperHigh performance 14nm SOI FinFET CMOS technology with 0.0174μm2 embedded DRAM and 15 levels of Cu metallization
- C.-H.C-H. Lin
- Brian Greene
- et al.
- 2014
- IEDM 2014
Conference paper0.026μm2 high performance Embedded DRAM in 22nm technology for server and SOC applications
- C. Pei
- G. Wang
- et al.
- 2014
- IEDM 2014
Conference paperOff-state self-heating, micro-hot-spots, and stress-induced device considerations in scaled technologies
- Siyu Koswatta
- N. Mavilla
- et al.
- 2015
- IEDM 2015
Conference paperFinite element based three dimensional Schrödinger solver for nano-scale devices
- Samarth Agarwal
- Kai Xiu
- et al.
- 2014
- Journal of Computational Electronics
PaperA comparative study of fin-last and fin-first SOI FinFETs
- Darsen Lu
- Josephine Chang
- et al.
- 2013
- SISPAD 2013
Conference paperComprehensive study of effective current variability and MOSFET parameter correlations in 14nm multi-fin SOI FINFETs
- Abhijeet Paul
- Andres Bryant
- et al.
- 2013
- IEDM 2013
Conference paperFin width scaling for improved short channel control and performance in aggressively scaled channel length SOI finFETs
- Abhijeet Paul
- Chun-Chen Yeh
- et al.
- 2013
- S3S 2013
Conference paperEfficient and accurate schematic transistor model of FinFET parasitic elements
- Ning Lu
- Terence B. Hook
- et al.
- 2013
- IEEE Electron Device Letters
Paper