Nanowire metal-oxide-semiconductor field effect transistor with doped epitaxial contacts for source and drain
- G.M. Cohen
- M.J. Rooks
- et al.
- 2007
- Applied Physics Letters
Paper
Publications
167 results for Paul Solomon
Gate work function engineering for nanotube-based circuits
- Zhihong Chen
- Joerg Appenzeller
- et al.
- 2007
- ISSCC 2007
Conference paperModeling single-event upsets in 65-nm silicon-on-insulator semiconductor devices
- A.J. KleinOsowski
- Phil Oldiges
- et al.
- 2006
- IEEE TNS
PaperSilicon CMOS devices beyond scaling
- Wilfried Haensch
- Edward J. Nowak
- et al.
- 2006
- IBM J. Res. Dev
PaperSimulation study of a metal / high-κ gate stack for low-power applications
- Arvind Kumar
- Paul M. Solomon
- 2006
- SISPAD 2006
Conference paperSuitability of metal gate stacks for low-power and high-performance applications: Impact of carrier confinement
- Arvind Kumar
- Paul Michael Solomon
- 2006
- IEEE Transactions on Electron Devices
PaperDC transformer: Dream or reality?
- B. Laikhtman
- P. Solomon
- 2006
- Solid State Communications
PaperAn integrated logic circuit assembled on a single carbon nanotube
- Zhihong Chen
- Joerg Appenzeller
- et al.
- 2006
- Science
PaperElectron-drag effect in Si metal-oxide-semiconductor devices with thin oxide layers
- Boris Laikhtman
- Paul M. Solomon
- 2005
- Physical Review B - CMMP
PaperCharge control in a model biphenyl molecular transistor
- Norton D. Lang
- Paul M. Solomon
- 2005
- Nano Letters
Paper