Systematic study of pFET Vt with Hf-based gate stacks with poly-Si and FUSI gates
- E. Cartier
- V. Narayanan
- et al.
- 2004
- VLSI Technology 2004
Conference paper
Publications
182 results for Eduard Cartier
Surface potential and morphology issues of annealed (HfO 2) x(SiO 2) 1-x gate oxides
- R. Ludeke
- P. Lysaght
- et al.
- 2004
- Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Conference paperDual work function metal gate CMOS using CVD metal electrodes
- V. Narayanan
- A.C. Callegari
- et al.
- 2004
- VLSI Technology 2004
Conference paperImpact of band structure on charge trapping in thin SiO 2/Al 2O 3/poly-Si gate stacks
- L. Pantisano
- L. Lucci
- et al.
- 2004
- IEEE Electron Device Letters
PaperCharge trapping in SiO2/HfO2 gate dielectrics: Comparison between charge-pumping and pulsed ID-VG
- A. Kerber
- E. Cartier
- et al.
- 2003
- INFOS 2003
Conference paperTransport and exchange of hydrogen isotopes in silicon-device-related stacks
- C. Krug
- E. Gusev
- et al.
- 2004
- Journal of Applied Physics
PaperInversion channel mobility in high-κ high performance MOSFETs
- Z. Ren
- M.V. Fischetti
- et al.
- 2003
- IEDM 2003
Conference paperStress induced charge trapping effects in SiO2/Al 2O3 gate stacks with TiN electrodes
- A. Kerber
- E. Cartier
- et al.
- 2003
- Journal of Applied Physics
PaperDirect Measurement of the Inversion Charge in MOSFETs: Application to Mobility Extraction in Alternative Gate Dielectrics
- A. Kerber
- E. Cartier
- et al.
- 2003
- VLSI Technology 2003
Conference paperOn the thermal stability of atomic layer deposited TiN as gate electrode in MOS devices
- J. Westlinder
- T. Schram
- et al.
- 2003
- IEEE Electron Device Letters
Paper