Plasma post-oxidation for high mobility strained-Ge pFETs with aggressively scaled high-κ dielectrics
- Winston Chern
- Pouya Hashemi
- et al.
- 2014
- ECSSMEQ 2014
Conference paper
Publications
13 results for Judy L. Hoyt
Record hole mobility at high vertical fields in planar strained germanium on insulator with asymmetric strain
- Winston Chern
- Pouya Hashemi
- et al.
- 2014
- IEEE Electron Device Letters
PaperHigh mobility high-κ-all-around asymmetrically-strained Germanium nanowire trigate p-MOSFETs
- Winston Chern
- Pouya Hashemi
- et al.
- 2012
- IEDM 2012
Conference paperUltrathin strained-ge channel P-MOSFETs with high-k/metal gate and Sub-1-nm equivalent oxide thickness
- Pouya Hashemi
- Winston Chern
- et al.
- 2012
- IEEE Electron Device Letters
PaperHigh hole-mobility strained-Ge/Si 0.6Ge 0.4 P-MOSFETs with high-κ/metal gate: Role of strained-Si cap thickness
- Pouya Hashemi
- Judy L. Hoyt
- 2012
- IEEE Electron Device Letters
PaperMechanism of solid phase crystallization of prepatterned nanoscale α-Si pillars
- Hyun-Jin Cho
- Brian J. Greene
- et al.
- 2007
- Journal of Applied Physics
PaperSi-Ge interdiffusion in strained Si/strained SiGe heterostructures and implications for enhanced mobility metal-oxide-semiconductor field-effect transistors
- Guangrui Xia
- Judy L. Hoyt
- et al.
- 2007
- Journal of Applied Physics
PaperInterdiffusion in strained Si/strained SiGe epitaxial heterostructures
- Guangrui Xia
- Michael Canonico
- et al.
- 2006
- Semiconductor Science and Technology
PaperImpact of ion implantation damage and thermal budget on mobility enhancement in strained-Si N-channel MOSFETs
- Guangrui Xia
- Hasan M. Nayfeh
- et al.
- 2004
- IEEE Transactions on Electron Devices
PaperInvestigation of Scaling Methodology for Strained Si n-MOSFETs Using a Calibrated Transport Model
- Hasan M. Nayfeh
- Judy L. Hoyt
- et al.
- 2003
- IEDM 2003
Conference paper