Isolated As antisite in GaAs: Possibility of the EL2 defect
- Efthimios Kaxiras
- K.C. Pandey
- 1989
- Physical Review B
Paper
Publications
30 results for Efthimios Kaxiras
New classical potential for accurate simulation of atomic processes in Si
- Efthimios Kaxiras
- K.C. Pandey
- 1988
- Physical Review B
PaperEnergetics of defects and diffusion mechanisms in graphite
- Efthimios Kaxiras
- K.C. Pandey
- 1988
- Physical Review Letters
PaperHole dynamics in the two-dimensional strong-coupling Hubbard Hamiltonian
- Efthimios Kaxiras
- Efstratios Manousakis
- 1988
- Physical Review B
PaperGround state of the strong-coupling Hubbard Hamiltonian: A numerical diagonalization study
- Efthimios Kaxiras
- Efstratios Manousakis
- 1988
- Physical Review B
PaperAb initio theory of polar semiconductor surfaces. II. (22) reconstructions and related phase transitions of GaAs(1»1»1»)
- E. Kaxiras
- Y. Bar-Yam
- et al.
- 1987
- Physical Review B
PaperAb initio theory of polar semiconductor surfaces. I. Methodology and the (22) reconstructions of GaAs(111)
- E. Kaxiras
- Y. Bar-Yam
- et al.
- 1987
- Physical Review B
PaperVariable stoichiometry surface reconstructions: New models for GaAs(111) (2×2) and (19×19)
- E. Kaxiras
- Y. Bar-Yam
- et al.
- 1986
- Physical Review Letters
PaperRole of chemical potentials in surface reconstruction: A new model and phase transition of GaAs(111)2x2
- E. Kaxiras
- K.C. Pandey
- et al.
- 1986
- Physical Review Letters
Paper(2×2) reconstructions of the {111} polar surfaces of GaAs
- E. Kaxiras
- Y. Bar-Yam
- et al.
- 1986
- Physical Review B
Paper