Characteristics and device design of sub-100 nm strained Si N- and PMOSFETs
- K. Rim
- J.O. Chu
- et al.
- 2002
- VLSI Technology 2002
Conference paper
Publications
53 results for Ken Rim
Mobility enhancement in strained Si NMOSFETs with HfO2 gate dielectrics
- K. Rim
- E. Gusev
- et al.
- 2002
- VLSI Technology 2002
Conference paperMeasurement of the effect of self-heating in strained-silicon MOSFETs
- Keith A. Jenkins
- K. Rim
- 2002
- IEEE Electron Device Letters
PaperEffect of thermal processing on strain relaxation and interdiffusion in Si/SiGe heterostructures studied using Raman spectroscopy
- S.J. Koester
- K. Rim
- et al.
- 2001
- Applied Physics Letters
PaperElectrical characterization of Al2O3 n-channel MOSFETs with aluminum gates
- L.Å. Ragnarsson
- S. Guha
- et al.
- 2001
- IEEE Electron Device Letters
PaperStrained Si NMOSFETs for high performance CMOS technology
- K. Rim
- S.J. Koester
- et al.
- 2001
- VLSI Technology 2001
Conference paperMulti Gbit/s, high-sensitivity all silicon 3.3V optical receiver using PIN lateral trench photodetector
- J. Schaub
- D. Kuchta
- et al.
- 2001
- OFC 2001
Conference paperMulti Gbit/s, high-sensitivity all silicon 3.3V optical receiver using PIN lateral trench photodetector
- Jeremy D. Schaub
- Daniel M. Kuchta
- et al.
- 2001
- OFC 2001
Conference paperStrained Si surface channel MOSFETS for high-performance CMOS technology
- K. Rim
- 2001
- ISSCC 2001
Conference paperHigh speed silicon lateral trench detector on SOI substrate
- Min Yang
- Jeremy Schaub
- et al.
- 2001
- Technical Digest-International Electron Devices Meeting
Paper