Electrical and physical properties of high-Ge-content Si/SiGe p-type quantum wells
- R.A. Kiehl
- P.E. Batson
- et al.
- 1993
- Physical Review B
Paper
Publications
135 results for James C. Tsang
Critical test of the structure of the ordered phase in epitaxially grown SixGe1-x films
- F.K. LeGoues
- R.M. Tromp
- et al.
- 1993
- Physical Review B
PaperEnhanced nucleation and growth of diamond on SiC by plasma enhanced chemical vapor deposition using thin metal films
- J.E. Yehoda
- R.I. Fuentes
- et al.
- 1992
- Applied Physics Letters
PaperSynthesis of Si1-yCy alloys by molecular beam epitaxy
- Subramanian S. Iyer
- K. Eberl
- et al.
- 1992
- Applied Physics Letters
PaperRaman scattering from H or O terminated porous Si
- J.C. Tsang
- M.A. Tischler
- et al.
- 1992
- Applied Physics Letters
PaperRaman spectroscopy of CySi1-y alloys grown by molecular beam epitaxy
- J.C. Tsang
- K. Eberl
- et al.
- 1992
- Applied Physics Letters
PaperGrowth and strain compensation effects in the ternary Si 1-x-yGexCy alloy system
- K. Eberl
- Subramanian S. Iyer
- et al.
- 1992
- Applied Physics Letters
PaperLuminescence degradation in porous silicon
- M.A. Tischler
- R.T. Collins
- et al.
- 1992
- Applied Physics Letters
PaperMicrostructural evolution and substrate selectivity in PECVD μc-Si
- G.N. Parsons
- J.J. Boland
- et al.
- 1992
- Symposium on Dynamics in Small Confining Systems 1992
Conference paperLocalized and nonlocalized states in thin Ge layers grown by molecular-beam epitaxy at low temperatures
- J.C. Tsang
- J. Freeouf
- et al.
- 1992
- Physical Review B
Paper