Dependence on gate work function of oxide charging, defect generation, and hole currents in metal-oxide-semiconductor structures
- D.J. DiMaria
- 1997
- Journal of Applied Physics
Paper
Publications
119 results for D.J. DiMaria
Explanation for the oxide thickness dependence of breakdown characteristics of metal-oxide-semiconductor structures
- D.J. Dimaria
- 1997
- Microelectronic Engineering
PaperOn the relationship between stress induced leakage currents and catastrophic breakdown in ultra-thin SiO2 based dielectrics
- D.A. Buchanan
- J.H. Stathis
- et al.
- 1997
- Microelectronic Engineering
PaperDefect production, degradation, and breakdown of silicon dioxide films
- D.J. Dimaria
- 1997
- Solid-State Electronics
PaperExplanation for the polarity dependence of breakdown in ultrathin silicon dioxide films
- D.J. DiMaria
- 1996
- Applied Physics Letters
PaperAnode hole injection and trapping in silicon dioxide
- D.J. DiMaria
- E. Cartier
- et al.
- 1996
- Journal of Applied Physics
PaperInterface states induced by the presence of trapped holes near the silicon-silicon-dioxide interface
- D.J. DiMaria
- D.A. Buchanan
- et al.
- 1995
- Journal of Applied Physics
PaperAtomic hydrogen-induced degradation of thin SiO2 gate oxides
- E. Cartier
- D.A. Buchanan
- et al.
- 1995
- Journal of Non-Crystalline Solids
PaperStress induced leakage currents in thin oxides
- D.J. DiMaria
- 1995
- Microelectronic Engineering
PaperMechanism for stress-induced leakage currents in thin silicon dioxide films
- D.J. Dimaria
- E. Cartier
- 1995
- Journal of Applied Physics
Paper