Oxygen assisted ohmic contact formation mechanism to n-type GaAs
- Naftali Lustig
- R.G. Schad
- 1992
- Applied Physics Letters
Paper
Publications
2351 results at Applied Physics Letters
Absence of electrical activity at high-angle grain boundaries in zone-melt-recrystallized silicon-on-insulator films
- P.V. Evans
- D.A. Smith
- et al.
- 1992
- Applied Physics Letters
PaperNature of band bending at semiconductor surfaces by contactless electroreflectance
- X. Yin
- Xinxin Guo
- et al.
- 1992
- Applied Physics Letters
PaperHydrogen coverage during Si growth from SiH4 and Si 2H6
- S. Gates
- S.K. Kulkarni
- 1992
- Applied Physics Letters
PaperSelectivity in copper chemical vapor deposition
- Susan L. Cohen
- Michael Liehr
- et al.
- 1992
- Applied Physics Letters
PaperRefractive index determination of SiGe using reactive ion etching/ellipsometry: Application of the depth profiling of the GE concentration
- G.M.W. Kroesen
- G.S. Oehrlein
- et al.
- 1992
- Applied Physics Letters
PaperPhotoemission spectroscopy of GaAs:As photodiodes
- D.T. McInturff
- J. Woodall
- et al.
- 1992
- Applied Physics Letters
PaperHeavy arsenic doping of silicon grown by atmospheric-pressure chemical vapor deposition at low temperatures
- P. Agnello
- T.O. Sedgwick
- et al.
- 1992
- Applied Physics Letters
PaperOn the role of mobility and saturated velocity in the dynamic operation of p-i-n and metal-semiconductor-metal photodetectors
- Sandip Tiwari
- Michael A. Tischler
- 1992
- Applied Physics Letters
PaperTunable coupled-quantum-well laser controlled by an electric field
- L.Y. Liu
- E. Mendez
- et al.
- 1992
- Applied Physics Letters
Paper