Arsenic precipitates in Al0.3Ga0.7As/GaAs multiple superlattice and quantum well structures
- K. Mahalingam
- N. Otsuka
- et al.
- 1992
- Applied Physics Letters
Paper
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2351 results at Applied Physics Letters
Photoemission spectroscopy of GaAs:As photodiodes
- D.T. McInturff
- J. Woodall
- et al.
- 1992
- Applied Physics Letters
PaperAmbient gas effects on debris formed during KrF laser ablation of polyimide
- Stephan Küper
- James Brannon
- 1992
- Applied Physics Letters
PaperLow pressure chemical vapor deposition of oxide from SiH4/O 2: Chemistry and effects on electrical properties
- M. Liehr
- S. Cohen
- 1992
- Applied Physics Letters
PaperHeavy arsenic doping of silicon grown by atmospheric-pressure chemical vapor deposition at low temperatures
- P. Agnello
- T.O. Sedgwick
- et al.
- 1992
- Applied Physics Letters
PaperX-ray reflectivity analysis of giant-magnetoresistance spin-valve layered structures
- T.C. Huang
- J.-P. Nozieres
- et al.
- 1992
- Applied Physics Letters
PaperEnhanced current density Jc and extended irreversibility in single-crystal Bi2Sr2Ca1Cu2O 8 via linear defects from heavy ion irradiation
- J.R. Thompson
- Y.R. Sun
- et al.
- 1992
- Applied Physics Letters
PaperOxidation induced AlAs/GaAs superlattice disordering
- J.C.P. Chang
- K.L. Kavanagh
- et al.
- 1992
- Applied Physics Letters
PaperLuminescence degradation in porous silicon
- M.A. Tischler
- R.T. Collins
- et al.
- 1992
- Applied Physics Letters
PaperTHz spectroscopy and source characterization by optoelectronic interferometry
- Stephen E. Ralph
- D. Grischkowsky
- 1992
- Applied Physics Letters
Paper