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- Microelectronic Engineering
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14462 results for Physical Sciences
SrHfO3 as gate dielectric for future CMOS technology
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- 2007
- Microelectronic Engineering
PaperMultiport measurement method using a two-port network analyzer with remaining ports unterminated
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- 2007
- IEEE MWCL
PaperImpact of high-κ and SiO2 interfacial layer thickness on low-frequency (1/f) noise in aggressively scaled metal gate/HfO2 n-MOSFETs: role of high-κ phonons
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- Microelectronic Engineering
PaperDual layer SrTiO3/HfO2 gate dielectric for aggressively scaled band-edge nMOS devices
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- Microelectronic Engineering
PaperRecent advances and current challenges in the search for high mobility band-edge high-k/metal gate stacks
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- Microelectronic Engineering
PaperIn-situ MBE Si as passivating interlayer on GaAs for HfO2 MOSCAP's: effect of GaAs surface reconstruction
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- Microelectronic Engineering
PaperTransport measurements on ultra-thin CaBaCuO films
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- Physica C: Superconductivity and its Applications
PaperTime evolution of surface relief structures in thin block copolymer films
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- Macromolecules
PaperAn in situ study of the adsorption behavior of functionalized particles on self-assembled monolayers via different chemical interactions
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- Langmuir
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