Yichen Xu, Baoqi Zhu, et al.
VLSI Technology and Circuits 2026
Today’s most advanced semiconductor devices contain tens of billions or hundreds of billions of contact holes with dimensions near or less than 20 nm, and often even one missing hole can result in a non-functioning device. Current defect inspection capabilities are hard pressed to meet the need at the most advanced nodes.This paper will use a lithography-inspired model of the “fat tail” that predicts the typical skewed distribution with higher rates of undersized holes as compared to a Gaussian distribution. We will examine CD-SEM metrology and evaluate its ability to measure holes as their size approaches this regime, which will become critical for the next generation of nodes at 2nm and beyond.
Yichen Xu, Baoqi Zhu, et al.
VLSI Technology and Circuits 2026
Lin Dong, Steven Hung, et al.
VLSI Technology 2021
Alex Hubbard, Christopher Carr, et al.
SPIE Advanced Lithography + Patterning 2026
Akihiro Horibe, Yoichi Taira, et al.
IEDM 2025